Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications

摘要: Abstract Process compatible high- k dielectric thin films are one of the key solutions to develop high performance metal–insulator–metal (MIM) structures for future microelectronic devices. Engineered cerium–aluminate (Ce x Al 2– O 3 ) were deposited on titanium nitride metal electrodes by electron-beam co-evaporation ceria and alumina in a molecular beam deposition chamber. X-ray photoelectron spectroscopy clearly reveals that Ce cations can be stabilized 3+ valence state up  = 0.7 accommodation host matrix. Higher content was observed result cerium dioxide segregation aluminate matrix, probably due chemical tendency exist rather 4+ than state. Electrical characterization amorphous 0.7 1.3 constant value about 11 leakage current lower 10 −4  A/cm 2 . No parasitic low- interface formation between film TiN electrode is detected.