Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

摘要: In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use Au nanoislands on surface formed by rapid thermal annealing thin layer. Surface plasmons are excited field localization results in efficient absorption sub-bandgap photons. Absorbed photons excite the electrons metal to higher energy levels (hot electron generation) collection these hot semiconductor photocurrent (internal photoemission). Simple scalable fabrication makes suitable for ultra-low-cost NIR detection applications.