Processing and Thermoelectric Performance Characterization of Thin-Film Devices Consisting of Electrodeposited Bismuth Telluride and Antimony Telluride Thin-Film Legs
作者： Min-Young Kim , Tae-Sung Oh
DOI: 10.1007/S11664-011-1562-8
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摘要: Thermopile thin-film devices were fabricated by successive electrodeposition of p-type Sb-Te and n-type Bi-Te films. The thermopile processed with 1-μm-thick SiO2 as an insulating layer on the legs exhibited sensitivity 57.5 mV/K, much larger than 7.3 mV/K measured for a 6-μm-thick photoresist. Sensitivity 30.4 was obtained SiNx layer.
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