III-Nitride nanowires for UV-visible optoelectronics

摘要: Compared to planar films, III-nitride nanowires have several potential advantages for device applications. Using a top-down approach, high quality III-nitride-based with controllable height, pitch and diameter been realized. The fabrication, structural characterization, luminescence of both axial radial type nanowire LEDs will be presented, along discussion their relative merits weaknesses. lasing characteristics GaN-based GaN/InGaN based fabricated by this approach also schemes single optical mode selection, polarization control, beam shaping, wavelength tuning. Preliminary results on the fabrication characterization AlGaN presented.