Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor
作者： A. Sharma , N. M. A. Janssen , S. G. J. Mathijssen , D. M. de Leeuw , M. Kemerink
DOI: 10.1103/PHYSREVB.83.125310
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摘要: We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges …
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