Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors.
作者： Vitaly Podzorov , C. Hsieh , M. F. Calhoun
DOI: 10.1103/PHYSREVLETT.98.096402
关键词:
摘要: The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been …
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