作者: V. N. Katerinchuk , Z. R. Kudrynskyi , Z. D. Kovalyuk
DOI: 10.1134/S1063784214030141
关键词:
摘要: The object of investigation is photoresponse spectra taken from the cleaved end face heterojunctions formed by GaSe and InSe anisotropic crystals. Spectra as-prepared chemically processed faces are compared. A modified method growing crystals with a virgin suggested, surface thus grown examined atomic force microscopy.