Photoelectric properties of n-ITO/p-GaTe heterojunctions
作者： V. N. Katerynchuk , Z. R. Kudrynskyi , Z. D. Kovalyuk
DOI: 10.1134/S1063782615050085
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摘要: The photoelectric properties of n-ITO/p-GaTe anisotypic heterojunctions fabricated by the spraying an InCl3 alcohol solution onto heated GaTe substrates are studied. results studying temperature dependences made it possible to determine mechanisms current passage through barrier. Energy-band diagrams heterojunction constructed. It is established that possesses photosensitivity in range 0.35–0.73 μm.
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