Fabrication and Characterization of Photosensitive n-CdO/p-InSe Heterojunctions

作者: Z.R. Kudrynskyi , Z.D. Kovalyuk , V.M. Katerynchuk , V.V. Khomyak , I.G. Orletsky

DOI: 10.12693/APHYSPOLA.124.720

关键词:

摘要: Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the rst time. The fabricated by dc reactive magnetron sputtering of CdO thin lms onto freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology obtained was means atomic force microscopy. From X-ray di raction result it is shown that lm polycrystalline with cubic structure. mechanisms current transport through space-charge region under forward back biases established investigation temperature dependences I V characteristics. main photoelectric parameters photosensitivity spectra measured at room temperature.

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