Defects in diamond thin films.
作者： M. Fanciulli , T. D. Moustakas
DOI: 10.1103/PHYSREVB.48.14982
关键词:
摘要: Defects in diamond films, produced by the filament-assisted chemical-vapor deposition of methane and hydrogen as a function total gas pressure substrate temperature, were investigated electron-paramagnetic-resonance measurements. We found an isotropic g value (2.0028±0.0002) independent growth conditions. The peak-to-peak linewidth increases with from 3.5 to 5 G spin density decreases increasing temperature varies between 10 19 17 spins/cm 3
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