Hole drift-mobility measurements in microcrystalline silicon
作者： T. Dylla , F. Finger , E. A. Schiff
DOI: 10.1063/1.1984087
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摘要: We have measured transient photocurrents on several p‐i‐n solar cells based microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity temperature-dependent measurements consistent with an exponential-bandtail trapping model for transport, which is usually associated noncrystalline materials. estimated valence bandtail widths about 31meV and band mobilities 1–2cm2∕Vs. The support mobility-edge transport holes in materials, broaden range materials corresponds apparently universal mobility order 1cm2∕Vs.
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