Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF)

摘要: The transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-μm thick n-i-p solar cell illuminated from p-side (n-side) to obtain electron (hole) current transients. transients exhibit dispersive behavior. At room temperature, drift-mobility values about 2–4 cm2 V−1 s−1 and 2 were deduced for electrons holes, respectively. dispersion parameters α1 α2, as determined pre- post-transit slopes similar those a-Si : H.