Carrier mobility, band tails and defects in microcrystalline silicon
作者： Steve Reynolds
DOI: 10.1088/1742-6596/253/1/012002
关键词:
摘要: The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, the attendant key parameters carrier mobility, band-tail width defect density, are linked to film structure composition. In particular we discuss wide (but systematic) variations in time-of-flight mobility its unusual field-dependence. While remains an inferior semiconductor single-crystal silicon, propose, support by means a computer model, that present device-grade material may be sufficient quality justify re-examining whether useful thin-film bipolar might developed. These could find application as more sensitive photo-detectors, current drivers organic LED displays logic circuits.
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