Hole Drift -Mobility Measurements and Multiple- Trapping in Microcrystalline Silicon

摘要: We present photocarrier time-of-flight measurements of the hole drift-mobility in microcrystalline silicon samples with a high crystalline volume fraction; typical roomtemperature values are about 1 cm/Vs. Temperature-dependent consistent model multiple-trapping an exponential bandtail. While this has often been applied to amorphous silicon, its success for predominantly is unexpected. The valence bandtail width 31 meV, which 10-20 meV smaller than reported a-Si:H, and presumably reflects greater order material. band-mobility cm/Vs – essentially same magnitude as electrons holes suggesting that basic characteristic mobility-edges, at least silicon-based materials. attempt-frequency υ 10 s; value substantially s typically but physical significance parameter remains obscure.