Electronic Structure and Crystal Field in Sm3Se4 and Sm3Te4

作者: M. Sugita , S. Kunii , K. Takegahara , N. Sato , T. Sakakibara

DOI: 10.1007/978-1-4684-8646-9_55

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摘要: The Th3P4 cubic crystal R3X4 (X denotes S, Se or Te) with Eu and Sm for R are interesting materials because the Fermi level is just at 4f which situated in gap between conduction valence bands. transport of electrons occurs by thermally induced hopping equivalent R++ R+++sites coexist ratio 1:2, respectively. In case Eu3S4 this mechanism supported results a Mossbauer experiment1 shape spectra 83 K 300 could be interpreted terms fluctuations time range 10−7−10−11 s. charge ordering ++and Eu+++ temperature about 160 K.2 For Sm3X4 compounds, however, problem more complex has not yet been observed even lowest down to 1.5 K.3-6 This may mean that some kind fluctuation temperature. Furthermore, data analyses magnetic susceptibility presented so far highly controversia1,3,4,7 again related possible existence fluctuations. We have made fairly big single crystals Sm3Se4 Sm3Te4, we examined above problems carefully, both experimentally theoretically.

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