Gettering rates of various fast‐diffusing metal impurities at ion‐damaged layers on silicon
作者： T.M. Buck , K.A. Pickar , J.M. Poate , C‐M. Hsieh
DOI: 10.1063/1.1654228
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摘要: … , Co, Ni, Cu, and Au by ion-damaged surface layers on silicon wafers has been studied by … -Fe, Co, and Auand those gettered rapidly-Cu and Ni. This trend is predicted by a simple …
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sci-hub.se 参考文章(9)
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