X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI
作者： Marco Bellini , Bongim Jun , Tianbing Chen , John D. Cressler , Paul W. Marshall
关键词:
摘要: X-ray total ionizing dose effects in both fully-depleted and partially-depleted SiGe HBT-on-SOI transistors are investigated at room cryogenic temperatures for the first time. Devices irradiated grounded forward-active mode configurations exhibit a different behavior depending on collector doping of device. The degradation produced by 10 keV x-rays is compared to previously reported 63 MeV proton results same devices, showing decreased irradiation. Both substrate bias shown affect two-dimensional nature current flow these resulting significant differences avalanche multiplication characteristics (hence, breakdown voltage) across temperature
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sci-hub.se 参考文章(18)
Tianbing Chen, M. Bellini, Enhai Zhao, J.P. Comeau, A.K. Sutton, C.M. Grens, J.D. Cressler, Jin Cai, Tak H. Ning, Substrate bias effects in vertical SiGe HBTs fabricated on CMOS-compatible thin film SOI bipolar/bicmos circuits and technology meeting. pp. 256- 259 ,(2005) , 10.1109/BIPOL.2005.1555245
Gregory Avenier, Thierry Schwartzmann, Pascal Chevalier, Benoit Vandelle, Laurent Rubaldo, Didier Dutartre, L Boissonnet, Fabienne Saguin, Roland Pantel, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer, A Chantre, None, A self-aligned vertical HBT for thin SOI SiGeC BiCMOS bipolar/bicmos circuits and technology meeting. pp. 128- 131 ,(2005) , 10.1109/BIPOL.2005.1555216
J.A. Babcock, J.D. Cressler, L.S. Vempati, S.D. Clark, R.C. Jaeger, D.L. Harame, Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD IEEE Transactions on Nuclear Science. ,vol. 42, pp. 1558- 1566 ,(1995) , 10.1109/23.488750
I.Z. Mitrovic, O. Buiu, S. Hall, D.M. Bagnall, P. Ashburn, Review of SiGe HBTs on SOI Solid-state Electronics. ,vol. 49, pp. 1556- 1567 ,(2005) , 10.1016/J.SSE.2005.07.020
D.M. Fleetwood, F.V. Thome, S.S. Tsao, P.V. Dressendorfer, V.J. Dandini, J.R. Schwank, High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility IEEE Transactions on Nuclear Science. ,vol. 35, pp. 1099- 1112 ,(1988) , 10.1109/23.7506
P.-F. Lu, T.-C. Chen, Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors IEEE Transactions on Electron Devices. ,vol. 36, pp. 1182- 1188 ,(1989) , 10.1109/16.24366
R.N. Nowlin, E.W. Enlow, R.D. Schrimpf, W.E. Combs, Trends in the total-dose response of modern bipolar transistors IEEE Transactions on Nuclear Science. ,vol. 39, pp. 2026- 2035 ,(1992) , 10.1109/23.211400
B. Banerjee, S. Venkataraman, Y. Lu, Q. Liang, C.-H. Lee, S. Nuttinck, D. Heo, Y.-J.E. Chen, J.D. Cressler, J. Laskar, G. Freeman, D. Ahlgren, Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors IEEE Transactions on Electron Devices. ,vol. 52, pp. 585- 593 ,(2005) , 10.1109/TED.2005.845078
Tianbing Chen, A.K. Sutton, M. Bellini, B.M. Haugerud, J.P. Comeau, Qingqing Liang, J.D. Cressler, Jin Cai, T.H. Ning, P.W. Marshall, C.J. Marshall, Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI IEEE Transactions on Nuclear Science. ,vol. 52, pp. 2353- 2357 ,(2005) , 10.1109/TNS.2005.860726
C-Y Lu, James D Chlipala, Leonard M Scarfone, None, Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repair IEEE Transactions on Electron Devices. ,vol. 36, pp. 1056- 1062 ,(1989) , 10.1109/16.24348