Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE

摘要: Low-pressure metalorganic-vapor-phase epitaxy (MOVPE) growth properties of InAsBi, such as the relationship between InBi composition and conditions, conditions by which crystal with mirror-like surface can be obtained, impurities in InAsBi layer, are investigated. A layer very high content (3–4%) compared to solubility limit 0.025% is obtained. On other hand, morphologies droplets, whiskers observed when not appropriate. In addition, percentage Bi substitutionally incorporated into InAs-zinc-blende lattice evaluated for first time. As crystal, both carbon silicon below detection limits, spite low temperature 365°C. Possible mechanisms dominating alloy droplet formation also discussed.