The onset of radiation blistering as a function of target temperature for D+ irradiated copper
作者： T.R. Armstrong , R.C. Corliss , P.B. Johnson
DOI: 10.1016/0022-3115(81)90160-4
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摘要: Radiation blistering in 200 keV D+ irradiated copper has been studied for target temperatures the range 120 to 380 K. Abrupt changes both critical dose and blister morphology are observed occur at of 195 ± 10 300 5 For ranges 190 K K, semi-spherical blisters with a mean diameter ~5.5 μm form fluences (2.0 0.5) × 1022 (4 1) d/m2, respectively. In intermediate temperature region, irregularly shaped ~1.3 found fluence (6 2) 1021 d/m2. Depth profiles implanted deuterium have obtained. The concentrations onset be approximately constant over although different concentration is each range. above decrease increasing temperature.
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