Residual Strain Dependence of Stimulated Emission in GaN Layers Grown on (0001) Sapphire Substrates

摘要: We have grown 1.5 µm-thick GaN layers on (0001) sapphire substrates by metalorganic chemical vapor deposition with various flow rates of trimethylgallium. The lattice constants a and c in the layer were estimated X-ray diffraction. threshold power density for stimulated emission was measured photopumping layers. It found that elastically deformed residual strain can be sustained decreasing rate also decreases as constant decreases. This tendency indicates relaxation mechanism is associated enhancement nonradiative recombination.