Comparison of nanoscale measurements of strain and stress using electron back scattered diffraction and confocal Raman microscopy
作者： Mark D. Vaudin , Yvonne B. Gerbig , Stephan J. Stranick , Robert F. Cook
DOI: 10.1063/1.3026542
关键词:
摘要: Stresses in Si as small 10 MPa have been measured using electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) with spatial resolutions of nm 100 nm, respectively. In both techniques, data were collected across wedge indentations (001) Si. EBSD the stress strain tensors CRM uniaxial stress. The results agreed very well except close to indentation, where surface-sensitive indicated larger stresses. Results converged when laser excitation wavelength was reduced, probing smaller depths. profiles are consistent inverse-square power law predicted by Eshelby analysis.
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sci-hub.se 参考文章(18)
Michael J. Pelletier, Analytical Applications of Raman Spectroscopy ,(1999)
Rodney Hill, The mathematical theory of plasticity ,(1950)
Claire E. Jordan, Stephan J. Stranick, Richard R. Cavanagh, Lee J. Richter, D.Bruce Chase, Near-field scanning optical microscopy incorporating Raman scattering for vibrational mode contrast Surface Science. ,vol. 433, pp. 48- 52 ,(1999) , 10.1016/S0039-6028(99)00069-2
Vincent Senez, Aldo Armigliato, Ingrid De Wolf, Gianpietro Carnevale, Roberto Balboni, Stefano Frabboni, Alessandro Benedetti, Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy Journal of Applied Physics. ,vol. 94, pp. 5574- 5583 ,(2003) , 10.1063/1.1611287
E. Anastassakis, A. Cantarero, M. Cardona, Piezo-Raman measurements and anharmonic parameters in silicon and diamond. Physical Review B. ,vol. 41, pp. 7529- 7535 ,(1990) , 10.1103/PHYSREVB.41.7529
Beth L. Symonds, R. F. Cook, B. R. Lawn, Dynamic fatigue of brittle materials containing indentation line flaws Journal of Materials Science. ,vol. 18, pp. 1306- 1314 ,(1983) , 10.1007/BF01111947
R. F. Cook, Strength and sharp contact fracture of silicon Journal of Materials Science. ,vol. 41, pp. 841- 872 ,(2006) , 10.1007/S10853-006-6567-Y
Razvigor Ossikovski, Quang Nguyen, Gennaro Picardi, Joachim Schreiber, Determining the stress tensor in strained semiconductor structures by using polarized micro-Raman spectroscopy in oblique backscattering configuration Journal of Applied Physics. ,vol. 103, pp. 093525- ,(2008) , 10.1063/1.2917314
G. H. Loechelt, N. G. Cave, J. Menéndez, Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors Journal of Applied Physics. ,vol. 86, pp. 6164- 6180 ,(1999) , 10.1063/1.371670
Angus J. Wilkinson, Graham Meaden, David J. Dingley, High-resolution elastic strain measurement from electron backscatter diffraction patterns: New levels of sensitivity Ultramicroscopy. ,vol. 106, pp. 307- 313 ,(2006) , 10.1016/J.ULTRAMIC.2005.10.001