Determining the stress tensor in strained semiconductor structures by using polarized micro-Raman spectroscopy in oblique backscattering configuration

摘要: We present a characterization technique for the determination of stress tensor as well crystallographic orientation strained semiconductor structures. The is based on polarized oblique incidence micro-Raman experiment in backscattering configuration. A methodology relating stress-induced frequency shifts and linewidths phonon peak to components within adopted experimental configuration was developed. method consists monitoring variations stress-sensitive frequencies while rotating stepwise sample about its normal. practical application illustrated Si∕SiGe microelectronic structure demonstrating full plane determination.