Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

摘要: We report on the experimental determination of biaxial stress characteristic strain state present in strained silicon nano-stripes insulator structures. Conventional confocal backscattering Raman spectroscopy being insensitive to tensorial nature strain, a methodology based use polarized oblique incidence is employed. The component values thus obtained are compared with those provided by grazing x-ray diffraction as reference technique. By combining configuration polarization control incident and scattered beams, an efficient method for accurate measurement patterned structures results.