Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon
作者： Emiliano Bonera , Marco Fanciulli , David N. Batchelder
DOI: 10.1063/1.1519105
关键词: Cauchy stress tensor 、 Optics 、 Paraxial approximation 、 Stress (mechanics) 、 Raman spectroscopy 、 Image resolution 、 Materials science 、 Resolution (electron density) 、 Silicon 、 Crystal
摘要: This letter presents a method to measure stress by Raman spectroscopic technique that combines high spatial resolution with tensorial analysis. The experiment is based on separating the contributions spectrum from marginal and paraxial rays of collection cone objective. tensor was measured over 20 μm line scan 1 highly strained (001) silicon surface in proximity micrometric scratch observing different frequency shifts three orthogonal crystal vibrations.
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