Measuring the tensor nature of stress in silicon using polarized off‐axis Raman spectroscopy

摘要: Polarized off‐axis Raman spectroscopy is a technique for measuring the complete tensor nature of stress fields in semiconductors. By combining incident light tilted away from normal axis with polarization and scattered beams, any Raman‐active optical phonon mode can be selectively studied. Once frequencies intensities these phonons are measured, uniquely determined. This has been applied macroscopically to mechanically deformed silicon wafers under biaxial tension. The results this approach compare favorably calculated by means theory elasticity.