Novel approach for synthesizing Ge fine particles embedded in glass by ion implantation: Formation of Ge nanocrystal in SiO2‐GeO2glasses by proton implantation
作者： Hideo Hosono , Noriaki Matsunami , Atsushi Kudo , Tosiaki Ohtsuka
DOI: 10.1063/1.112934
关键词:
摘要: Nanometer‐sized crystalline Ge colloid particles have been formed by implantation of protons into substrate glasses having a composition 1 GeO2‐9SiO2 to fluence 1×1018 cm−2 at an energy 1.5 MeV room temperature without post‐thermal annealing. Intensities the absorption band due reach maximum ∼30 μm from surface and their depth profile is close that electronic loss. No formation Si was observed in SiO2 or SiO2:GeO2 implanted with same conditions fluence.
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