1/f noise in ion-implanted indium phosphide layers
作者： Munecazu Tacano , Kinya Oigawa , Yoshinobu Sugiyama
DOI: 10.1016/0038-1101(88)90421-2
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摘要: Abstract The frequency dependence of noise levels in ion-implanted devices InP follows Hooge's relationship [ Phys. Lett. A-29 , 139 (1969)]. vary proportion to the square terminal voltages, and decrease linearly with total carriers throughout ranges from 0.1 Hz 100 kHz. Hooge parameter is α H = 1.5 × 10 −4 .
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