作者: J Molla , A Ibarra , R Heidinger , ER Hodgson
DOI: 10.1016/0022-3115(94)00519-2
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摘要: Abstract The special potential of high resistivity (HR) silicon for electron cyclotron wave transmission components nuclear fusion is related to the dominant contribution free charge carriers mm-wave absorption. It demonstrated by dielectric property measurements that irradiation can practically overcome problems concern applications, such as sensitivity loss (tan δ) ionizing radiation and complex temperature dependence tan δ. Also levels are lowered at room temperature. improvements correlated with total dose irradiations long term stability. inferred new structural defects formed, which act on centers trapping, recombination or scattering. As a consequence, δ values measured 145 GHz fall below those sapphire in range 120–350 K.