The coarsening of silicon particles in a submicron-grained layer-deposited Al-12wt% Si alloy

摘要: Abstract A submicron-grained Al-12wt% Si alloy with a uniform distribution of fine silicon particles was produced by layer-deposition process and subsequent hot working. The grain structure characterized high angle boundaries random spectrum orientation. average sizes both particle were about 0.4 μm in the as-rolled state. refinement came from dynamic recrystallization on particles. grains did not show significant growth annealing even at 493 °C for 24 hours, whereas grew remarkable rate. coarsening phenomenon elevated temperatures studied systematically specimens 372 °C, 433 472 respectively different periods. Results showed that volume increased linearly time. activation energy calculated Arrhenius equation to be 54 kcal/mole which is almost triple diffusion aluminum matrix. Because value, should diffusion-controlled but interface-controlled. In addition, size profile matrix after also accounts interface-controlled kinetics.