Subthreshold current model with modified threshold voltage for submicrometre scale GaAs MESFETs
作者： Sunita A Chhokra , Rachna Sood , R S Gupta
DOI: 10.1088/0268-1242/12/3/015
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摘要: A new analytical two-dimensional model is developed that accurately predicts channel potential variation with external voltages and along the length of in subthreshold regime, including drain-induced barrier lowering (DIBL) effects GaAs MESFETs. Threshold voltage modified to account for short effects. The parameters important modelling drain current are calculated this provides basis a model. Moreover, models compared those Adams numerical analysis good agreement obtained.
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sci-hub.se 参考文章(13)
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