Fabrication and characterization of ultrashort gate length GaAs field-effect transistors

摘要: We have fabricated GaAs metal–semiconductor field‐effect transistors (MESFET’s) and GaAs/AlGaAs modulation‐doped (MODFET’s) with gate lengths of 50 100 nm. A JEOL 5DIIU electron‐beam lithography system was used in the fabrication these nanometer transistors. This has demonstrated a 30‐nm overlay accuracy liftoff metal lines as narrow 25 The electrical measurement results showed room temperature extrinsic transconductance (gm) 540 mS/mm for 100‐nm MESFET’s over 600 MODFET’s. MESFET also exhibited small signal gain 16 dB at 18 GHz low‐noise bias point which is highest ever reported MESFET. significant short channel effect, however, been observed very In this paper, transistor will be discussed presented.