Unilfied electro-thermal stability criterion for bipolar transistors
作者： T. Vanhoucke , G.A.M. Hurkx
DOI: 10.1109/BIPOL.2005.1555196
关键词:
摘要: We present a unified electro-thermal criterion for quantifying the stability region of bipolar transistors. The can be used process optimization or circuit design. propose new figure-of-merit as maximum V/sub CE/ at which current peak f/sub T/ applied without runaway.
sci-hub.se 参考文章(7)
M. Pfost, P. Brenner, R. Lachner, Investigation of advanced SiGe heterojunction bipolar transistors at high power densities bipolar/bicmos circuits and technology meeting. pp. 100- 103 ,(2004) , 10.1109/BIPOL.2004.1365755
G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, M.A. Sorna, T. Tanji, O.M. Schreiber, K. Walter, Jae-Sung Rieh, B. Jagannathan, A. Joseph, S. Subbanna, 40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology IEEE Journal of Solid-state Circuits. ,vol. 37, pp. 1106- 1114 ,(2002) , 10.1109/JSSC.2002.801170
W. Liu, A. Khatibzadeh, The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling IEEE Transactions on Electron Devices. ,vol. 41, pp. 1698- 1707 ,(1994) , 10.1109/16.324577
W. Liu, S. Nelson, D.G. Hill, A. Khatibzadeh, Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities device research conference. ,vol. 40, pp. 1917- 1927 ,(1993) , 10.1109/16.239729
M. Rickelt, H.-M. Rein, A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits IEEE Journal of Solid-state Circuits. ,vol. 2, pp. 1184- 1197 ,(2002) , 10.1109/JSSC.2002.801197
N. Nenadovic, S. Mijalkovic, L.K. Nanver, L.K.J. Vandamme, V. d'Alessandro, H. Schellevis, J.W. Slotboom, Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors IEEE Journal of Solid-state Circuits. ,vol. 39, pp. 1764- 1772 ,(2004) , 10.1109/JSSC.2004.833766
N Sandersfeld, H Seyringer, G Lengauer, M Mühlberger, C Schelling, L Palmetshofer, F Schäffler, SiGe technology The VLSI handbook. ,(2000)