Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
作者： A. Mereuta , S. Bouchoule , F. Alexandre , I. Sagnes , J. Decobert
DOI: 10.1049/EL:20000318
关键词:
摘要: A performance comparison of InGaAs/GaAs and InGaNAs/GaAs strained quantum well (QW) laser structures grown by MOVPE is presented. Infinite threshold current densities 0.095 1.22 kA/cm/sup 2/, with slope efficiencies 0.25 0.15 W/A at emission wavelengths 1.18 /spl mu/m, were obtained, respectively. characteristic temperature (T/sub 0/) 80 K was determined for as-cleaved InGaAs QW lasers, while a T/sub 0/ value as high 117 obtained InGaNAs lasers in the 20-80/spl deg/C range.
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