Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
作者： G. Saint-Girons , A. Mereuta , G. Patriarche , J.M. Gérard , I. Sagnes
DOI: 10.1016/S0925-3467(01)00089-1
关键词: Analytical chemistry 、 Photoluminescence 、 Optoelectronics 、 Quantum dot 、 Laser 、 Blueshift 、 Far-infrared laser 、 Semiconductor laser theory 、 Thermal treatment 、 Materials science 、 Metalorganic vapour phase epitaxy
摘要: Abstract The optical and structural properties of a single array 1.3 μm emitting quantum dots (QDs) grown by LP-MOVPE are presented after different thermal treatments (between 570°C 670°C under arsine flux during 25 min) simulating the overgrowth confinement layers for broad area lasers. photoluminescence (PL) efficiency line is not affected treatment below 620°C. Nevertheless, drastic decrease peak intensity occurs higher anneal temperature (670°C), together with an important blueshift PL spectrum (≈40 meV). modifications QDs were studied TEM, showing In/Ga intermixing treatment. A low budget (
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