The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE
作者： R A Salii , S A Mintairov , A M Nadtochiy , V N Nevedomskiy , N A Kalyuzhnyy
DOI: 10.1088/1742-6596/1400/5/055015
关键词: Quantum dot 、 Materials science 、 Ingaas gaas 、 Metalorganic vapour phase epitaxy 、 Optoelectronics
摘要:
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sci-hub.se 参考文章(13)
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