Self organization phenomena of InGaAs/GaAs quantum dots grown by metalorganic chemical vapour deposition
作者： F. Heinrichsdorff , A. Krost , M. Grundmann , D. Bimberg , F. Bertram
DOI: 10.1016/S0022-0248(96)00614-8
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摘要: We have systematically investigated the influence of MOCVD growth parameters on structural and optical properties InxGa]_xAs/GaAs quantum dots (QDs) formed in Stranski-Krastanow mode. The interruption time, V/III ratio, In/Ga flux ratio temperature was examined by photoluminescence (PL), transmission electron microscopy (TEM) atomic force (AFM). For samples with high dot densities (up to 8 × 10 I° cm -2) surprisingly show a preferential alignment along (110) orientations differing from predictions strain relaxation equilibrium theory results for MBE grown InAs/GaAs dots. square base shape is oriented (100) agreement theoretical predictions.
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