Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands
作者： N. A. Cherkashin , N. N. Ledentsov , D. A. Bedarev , M. M. Sobolev , I. V. Kochnev
DOI: 10.1134/1.1187932
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摘要: A report is presented on the investigation of influence in situ annealing InGaAs layer p-n InGaAs/GaAs structures grown by metalloorganic chemical vapor deposition upon formation coherently strained three-dimensional islands. The were studied methods capacitance-voltage measurements, deep-level transient spectroscopy, transmission electron microscopy, and photoluminescence. It established that islands with misfit dislocations are formed unannealed structure A, while quantum dots annealed B. defects investigated. In various types (EL2, EL3 (I3), I2, HL3, HS2, H5) present electron-accumulation layer. Concentrations these traps comparable to shallow donor concentration, number hole higher than traps. On annealing, EL2 defects, which related dislocations, disappear, concentrations other decrease an order magnitude or more. For it population states controlled defects. B, effect Coulomb interaction charge carriers localized dot ionized observed.
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D Bimberg, M Grundmann, D, NN Ledentsov, Quantum dot heterostructures ,(1999)
G. Patrick Watson, Dieter G. Ast, Timothy J. Anderson, Balu Pathangey, Yasuhiro Hayakawa, The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates Journal of Applied Physics. ,vol. 71, pp. 3399- 3407 ,(1992) , 10.1063/1.350936
S. Anand, N. Carlsson, M‐E Pistol, L. Samuelson, W. Seifert, Deep level transient spectroscopy of InP quantum dots Applied Physics Letters. ,vol. 67, pp. 3016- 3018 ,(1995) , 10.1063/1.114937
F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, A. Kosogov, P. Werner, Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 68, pp. 3284- 3286 ,(1996) , 10.1063/1.116575
D. Stievenard, X. Boddaert, J. C. Bourgoin, H. J. von Bardeleben, Behavior of electron-irradiation-induced defects in GaAs Physical Review B. ,vol. 41, pp. 5271- 5279 ,(1990) , 10.1103/PHYSREVB.41.5271
D. Bimberg, V.A. Shchukin, N.N. Ledentsov, A. Krost, F. Heinrichsdorff, Formation of self-organized quantum dots at semiconductor surfaces Applied Surface Science. ,vol. 130, pp. 713- 718 ,(1998) , 10.1016/S0169-4332(98)00142-1
G.M. Martin, A. Mitonneau, A. Mircea, Electron traps in bulk and epitaxial GaAs crystals Electronics Letters. ,vol. 13, pp. 191- 193 ,(1977) , 10.1049/EL:19770140
G. Yusa, H. Sakaki, Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures Applied Physics Letters. ,vol. 70, pp. 345- 347 ,(1997) , 10.1063/1.119068
A. Mitonneau, G.M. Martin, A. Mircea, Hole traps in bulk and epitaxial GaAs crystals Electronics Letters. ,vol. 13, pp. 666- 668 ,(1977) , 10.1049/EL:19770473
MM Sobolev, AR Kovsh, VM Ustinov, A Yu Egorov, AE Zhukov, None, Metastable population of self-organized InAs/GaAs quantum dots Journal of Electronic Materials. ,vol. 28, pp. 491- 495 ,(1999) , 10.1007/S11664-999-0100-4