Method of fabricating salicide in electrostatic discharge protection device
作者： Shih-Ying Hsu
DOI:
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摘要: A method of fabricating a salicide layer in an electrostatic discharge protection device. On MOS transistor having gate, source region and drain region, block is formed. The patterned to remaining covering the only, leaving other portions substrate exposed. anti-reflection coating then removed expose gate. formed on exposed gate portion substrate, while free from for being covered with layer.
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