Transistor fabrication method
作者： Sailesh Chittipeddi , Taeho Kook , Avinoam Kornblit
DOI:
关键词:
摘要: A method of forming low stack height transistors having controllable linewidth in an integrated circuit without channeling is disclosed. disposable hardmask doped glass utilized to define the gate and subsequently protect (and underlying substrate) during ion implantation which forms source drains. variety silicided non-silicided) structures may be formed.
lens.org 参考文章(38)
Robert H. Havemann, Method of fabricating a self-aligned contact using organic dielectric materials ,(1994)
Gurtej S. Sandhu, Yauh-Ching Liu, Chang Yu, Semiconductor manufacturing process for decreasing the optical refelctivity of a metal layer ,(1991)
Heinrich J. Zeininger, Christoph Zeller, Wilfried Hänsch, Udo Schwalke, Method of forming shallow junctions in field effect transistors ,(1992)
Chang-Ming Dai, Jau-Hwang Ho, Lou G. Chine, Reduced notching of polycide gates using silicon anti reflection layer ,(1995)
Kyoichi Suguro, Method of fabricating a semiconductor device having silicided source/drain regions ,(1992)
Takeshi Sentarou, MANUFACTURE AND APPARATUS FOR FULLY RIPE COMPOST AND ORGANIC FERTILIZER ,(1987)
Shibata Tadashi, Iizuka Hisakazu, Method for manufacturing a semiconductor device ,(1981)
Sasaki Yoshitaka, Method of manufacturing semiconductor device ,(1985)
Higuchi Toshihiko, MANUFACTURE OF MOS TYPE SEMICONDUCTOR DEVICE ,(1987)
Kobayashi Toshimasa, Nakayama Norikazu, Kawai Hiroharu, Matsuda Osamu, SEMICONDUCTOR DEVICE AND ITS MANUFACTURE ,(1997)