Photoelectric conversion device, image sensor, and method of manufacturing a photoelectric conversion device
作者： Toshihiko Omi , Yoichi Mimuro
DOI:
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摘要: Provided is a photoelectric conversion device including: semiconductor substrate (3) of first conductivity type; region (7) second type which located in the (3), being opposite to and buried layer (17) formed an inner portion cover lower side (7), including higher impurity concentration than (3).
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