Photoelectric conversion device, and image sensor and image input system making use of the same

摘要: In a photoelectric conversion device comprising first-conductivity type first semiconductor region located in pixel region, second-conductivity second provided the and wiring for electrically connecting to circuit element outside shield is on light-incident side of wiring, via an insulator such way that it covers at least part also comprises conductor whose potential stands fixed. This may hardly be affected with low-frequency radiated noises as typified by power-source noise.