Predicting Ga and Cu Profiles in Co-Evaporated Cu(In,Ga)Se 2 Using Modified Diffusion Equations and a Spreadsheet
作者： Ingrid L. Repins , Steve Harvey , Karen Bowers , Stephen Glynn , Lorelle M. Mansfield
DOI: 10.1557/ADV.2017.350
关键词:
摘要: Cu(In,Ga)Se2 (CIGS) photovoltaic absorbers frequently develop Ga gradients during growth. These vary as a function of growth recipe, and are important to device performance. Prediction profiles using classic diffusion equations is not possible because In atoms occupy the same lattice sites thus diffuse interdependently, there yet detailed experimental knowledge chemical potential composition that describes this interaction. We show how can be modified account for site sharing between atoms. The analysis has been implemented in an Excel spreadsheet, outputs predicted Cu, In, entered deposition recipes. A single set coefficients activation energies chosen, such simulated elemental track with published data those from study. Extent limits agreement recipes spreadsheet tool demonstrated.
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