A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

摘要: We present a one-dimensional Fickian model that predicts the formation of double Ga gradient during fabrication Cu(In,Ga)Se2 thin films by three-stage thermal co-evaporation. The is based on chemical reaction equations, structural data, and effective diffusivities. In model, surface depleted from deposition Cu-Se in second stage, leading to an accumulation near back contact. During third where In-Ga-Se deposited at surface, atomic fluxes within growing layer are inverted. This results reproduces experimentally observed distributions. final shape depth profile strongly depends temperatures, times rates used. used evaluate possible paths flatten marked obtained when depositing low substrate temperatures. conclude inserting stage way achieve this.