作者: Pedro M.P. Salomé , Viktor Fjällström , Piotr Szaniawski , Joaquim P. Leitão , Adam Hultqvist
DOI: 10.1002/PIP.2453
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摘要: Until this day, the most efficient Cu(In,Ga)Se2 thin film solar cells have been prepared using a rather complex growth process often referred to as three-stage or multistage. This family of processes is mainly characterized by first step deposited with only In, Ga and Se flux form layer. Cu added in second until becomes slightly Cu-rich, where-after converted its final Cu-poor composition third stage, again no very little addition Cu. In paper, comparison between one-stage/in-line same composition, thickness, cell stack made. The one-stage easier be used an industrial scale do not Cu-rich transitions. samples were analyzed glow discharge optical emission spectroscopy, scanning electron microscopy, X-ray diffraction, current–voltage-temperature, capacitance-voltage, external quantum efficiency, transmission/reflection, photoluminescence. It was concluded that spite differences texturing, morphology gradient, electrical performance two types quite similar demonstrated J–V behavior, spectral response, estimated recombination losses. Copyright © 2014 John Wiley & Sons, Ltd.