High thermal responsiveness of a reduced graphene oxide field-effect transistor.
作者： Tran Quang Trung , Nguyen Thanh Tien , Doil Kim , Jin Heak Jung , Ok Ja Yoon
关键词:
摘要: stimuli. Stimuli-responsive FETs are very attractive for sensing applications due to their simplicity of design, ease mass production in a high-density array, facile integration into integrated circuits, compatibility with large-area conformable substrate, and inherent capability signal amplifi cation. By directly incorporating single-stimulus or multiple-stimuli-responsive materials as an active channel, electrode gate dielectric layer the FET structure, [ 6–10 ] interference from component by other subcomponents stimuli-responsive under globally-applied stimuli, such hydrostatic pressurizing thermal loading, may be simply eliminated, precise signals extracted. 6 , 7
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