Ion transport and dielectric relaxation studies in nanocrystalline Ce0.8Ho0.2O2−δ material
作者： Ashok Kumar Baral , V. Sankaranarayanan
DOI: 10.1016/J.PHYSB.2009.02.002
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摘要: Abstract The ac electrical conductivity and dielectric relaxation properties of nanocrystalline 20 mol% Ho doped ceria (Ce 0.8 0.2 O 2− δ ) prepared by citrate auto ignition method, were studied in the temperature range 300–550 °C. behaviour showed absence any precipitation inside grains, even though it has tendency forming a C-type structure similar to 2 3 association with oxygen vacancies. frequency spectra electric modulus M ″ exhibits single peak corresponding reorientation vacancy around +3 ions cubic nanostructured material. migration Ce material takes place through hopping energy vacancies long order motion are found be 1.02 0.24 eV, respectively.
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