Photophysical and photocatalytic properties of Bi2MNbO7 (M=Al, In, Ga, Fe) thin films prepared by dip-coating
作者： JL Ropero-Vega , KL Rosas-Barrera , JA Pedraza-Avella , DA Laverde-Cataño , JE Pedraza-Rosas
DOI: 10.1016/J.MSEB.2010.03.019
关键词:
摘要: In this work we report the preparation and characterization of Bi2MNbO7 (M = Al, Ga, In, Fe) transparent thin films on glass slides. The were obtained by dip-coating using bismuth(III) acetate, niobium(V) ethoxide corresponding metal(III) acetylacetonate precursors. Crystal structure elemental analysis performed X-ray diffraction (XRD) energy dispersive fluorescence (EDXRF). band-gap (Eg) semiconductor was estimated UV–vis spectroscopy. Their photocatalytic activity evaluated in degradation methyl orange (MeO) aqueous solution. presence a crystalline phase Bi–M–Nb–O systems with pyrochlore-type suggested peak at 2θ ≈ 29.01. proportion Bi–Ga–Nb–O film fits better to stoichiometric ratio Bi2MNbO7. Eg values were: Bi2FeNbO7 (2.47 eV) < Bi2GaNbO7 (2.67 Bi2AlNbO7 (2.79 Bi2InNbO7 (3.01 calculated kinetic parameter t1/2 (239 min) (278 (296 (319 min). These results indicate that slight narrowing has positive effect properties but those further than 2.5 eV detrimental effect.
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