Fabrication and post-chemical-etched surface texturing of H and Ti co-doped ZnO film for silicon thin-film solar cells

摘要: Abstract In this study, H and Ti co-doped ZnO thin-films were prepared by radio frequency magnetron sputtering with a target containing 1 wt% TiO 2 on glass substrates at room temperature. The structural, electrical, optical properties of HTZO films investigated respect to the variation in film thickness. results indicated that all had hexagonal wurtzite structure showed good c -axis orientation perpendicular substrate. crystallinity grain size increased as thickness increased. resistivity decreased from 12.58×10 −4 5.75×10  Ω·cm. order enable application Si thin-film solar cells, optimal post-chemical etched diluted HCl NaOH, respectively, various times. HCl-etched specimens crater-like features NaOH-etched hole characteristics. With increasing etching time, root mean square roughness first then decreased, while sheet resistance time. A high light trapping abilities is achieved total transmittance nearly 90%, haze values 78.7%, 47.74%, 26.35% 550 nm, 800 nm, 1100 nm, for 30 s. It found chemical wet-etched substrate useful enhancing short circuit current cells.