An experimental view on PureB silicon photodiode device physics

摘要: PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to Si surface. Robust light-entrance windows can be made from as little a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding these attractive properties are due creation fixed negative charge when deposited on supported extensive experimental observations some which will reviewed in this paper. For example, p+n-like diodes with equally I-V characteristics fabricated layers temperature range 700°C down 400°C, at no doping bulk expected. A number electrical test structures, specifically developed study behavior as-deposited junctions discussed along experiments designed investigate influence post-processing steps, particular thermal/laser annealing steps. show degrade interface and cause an increase otherwise ideal diode saturation current even situations where replaced ultrashallow p+-doped regions.