Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion
作者： Steven Consiglio , Robert D. Clark , David O'Meara , Cory S. Wajda , Kandabara Tapily
DOI: 10.1116/1.4928705
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摘要: In this study, the authors investigated atomic layer deposition (ALD) of B2O3 and BN for conformal, ultrashallow B doping applications compared effect dopant-containing overlayers on sheet resistance (Rs) profiles both types films subjected to a drive-in thermal anneal. For B2O3, tris(dimethylamido)borane O3 were used as coreactants BN, BCl3 NH3 coreactants. Due extreme air instability films, physical analysis was performed which capped in-situ with ∼30 A ALD grown Al2O3 layers. Si3N4 capping layers (∼30 A) comparison. From spectroscopic ellipsometry, thickness decrease observed after 1000 °C, 30 s anneal containing stack 60 cycles whereas stacks showed negligible annealing step, regardless number tested. The postanneal reduction in...
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